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DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
BAT754 series Schottky barrier (double) diodes
Product specification 1999 Aug 05
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
FEATURES * Very low forward voltage * Guard ring protected * Small plastic SMD package * Low diode capacitance. APPLICATIONS * Ultra high-speed switching * Voltage clamping * Protection circuits * Blocking diodes * Low power consumption applications, e.g. hand-held applications. DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Low forward voltage selection of the BAT54 series. Single diodes and double diodes with different pinning are available. MARKING TYPE NUMBER BAT754 BAT754A BAT754C BAT754S MARKING CODE 2K 2L 2M 2N Fig.2 BAT754 single diode configuration (symbol). Fig.5
1
Top view
handbook, 2 columns
BAT754 series
PINNING BAT754 PIN A 1 2 3 a n.c. k k1 k2 C a1 a2 S a1 k2
MLC360
3 1 2
a1, a2 k1, k2 k1, a2
3
Fig.3
BAT754A diode configuration (symbol).
3
1
2
1
MGC421
2
MLC359
Fig.1
Simplified outline (SOT23) and pin configuration.
Fig.4
BAT754C diode configuration (symbol).
3 2 n.c.
MLC357
3 1 2
MLC358
BAT754S diode configuration (symbol).
1999 Aug 05
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 t = 8.3 ms half sinewave; JEDEC method - - - - PARAMETER CONDITIONS
BAT754 series
MIN.
MAX.
UNIT
30 200 300 600 +150 125 +125
V mA mA mA C C C
-65 - -65
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.6 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1. Pulse test: tp = 300 s; 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT23 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W reverse current diode capacitance VR = 25 V; note 1; see Fig.7 f = 1 MHz; VR = 1 V; see Fig.8 - - - - 600 - - 200 260 340 420 - 2 10 mV mV mV mV mV A pF PARAMETER CONDITIONS TYP. MAX. UNIT
1999 Aug 05
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
GRAPHICAL DATA
MSA892
BAT754 series
10 3 handbook, halfpage IF (mA) 10
2 (1) (2) (3)
10 3 IR (A) 10 2
(2) (1)
MSA893
10
10
1
(1)
(2) (3)
1
(3)
10 1
10 1 0 0.4 0.8 VF (V) 1.2 0 (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. 10 20 VR (V) 30
(1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.6
Forward current as a function of forward voltage; typical values.
Fig.7
Reverse current as a function of reverse voltage; typical values.
15 Cd (pF) 10
MSA891
5
0
0
10
20
V R (V)
30
f = 1 MHz; Tamb = 25 C.
Fig.8
Diode capacitance as a function of reverse voltage; typical values.
1999 Aug 05
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BAT754 series
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Aug 05
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BAT754 series
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Aug 05
6
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
NOTES
BAT754 series
1999 Aug 05
7
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/01/pp8
Date of release: 1999
Aug 05
Document order number:
9397 750 06048

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